SIA811ADJ Datasheet, PDF (8/12 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET with Schottky Diode

SiA811ADJ
Vishay Siliconix
New Product
SCHOTTKY TYPICAL CHARACTERISTICS T_A = 25 °C, unless otherwise noted
100
10
10
1
0.1
0.01
0.001
20 V
5V
T_J = 150 °C
1
T_J = 25 °C
0.1
0.0001
0.00001
- 50 - 25 0 25 50 75 100 125 150
T_J - Junction Temperature (°C)
Reverse Current vs. Junction Temperature
0.01
0.0
0.1
0.2
0.3
0.4
0.5
V_F - Forward Voltage Drop (V)
Forward Voltage Drop
300
240
180
120
60
0
0
4
8
12
16
20
V_RS - Reverse Voltage (V)
Capacitance
www.vishay.com
8
Document Number: 68955
S-82482-Rev. A, 13-Oct-08