SIA811ADJ Datasheet, PDF (1/12 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET with Schottky Diode

New Product
SiA811ADJ
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
V_DS (V)
- 20
R_DS(on) (Ω)
0.116 at V_GS = - 4.5 V
0.155 at V_GS = - 2.5 V
0.205 at V_GS = - 1.8 V
I_D (A)^a
- 4.5
- 4.5
- 4.5
Q_g
4.9 nC
SCHOTTKY PRODUCT SUMMARY
V_KA (V)
V_f (V)
Diode Forward Voltage
20
0.45 at 1 A
I_F (A)^a
2
PowerPAK SC-70-6 Dual
FEATURES
• Halogen-free
• LITTLE FOOT^® Plus Schottky Power MOSFET
• New Thermally Enhanced PowerPAK^®
RoHS
SC-70 Package
COMPLIANT
- Small Footprint Area
- Low On-Resistance
- Thin 0.75 mm profile
APPLICATIONS
• Cellular Charger Switch
• Asynchronous DC/DC for Portable Devices
• Load Switch for Portable Devices
S
K
1
A
2
NC
K
3
D
K
6
D
G
5
2.05 mm S
4
2.05 mm
0.75 mm
Marking Code
Part # Code
HD X
XXX
Lot Traceability
and Date Code
G
D
A
Ordering Information: SiA811ADJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage (MOSFET)
V_DS
- 20
Reverse Voltage (Schottky)
V_KA
20
V
Gate-Source Voltage (MOSFET)
V_GS
±8
T_C = 25 °C
- 4.5^a
Continuous Drain Current (T_J = 150 °C) (MOSFET)
T_C = 70 °C
T_A = 25 °C
I_D
- 4.5^a
- 3.2^{b, c}
T_A = 70 °C
- 2.6^{b, c}
Pulsed Drain Current (MOSFET)
I_DM
-8
A
Continuous Source-Drain Diode Current
(MOSFET Diode Conduction)
T_C = 25 °C
T_A = 25 °C
I_S
- 4.5^a
- 1.5^{b, c}
Average Forward Current (Schottky)
I_F
2^b
Pulsed Forward Current (Schottky)
I_FM
5
T_C = 25 °C
6.5
Maximum Power Dissipation (MOSFET)
T_C = 70 °C
T_A = 25 °C
4.2
1.8^{b, c}
T_A = 70 °C
T_C = 25 °C
P_D
1.1^{b, c}
6.8
W
Maximum Power Dissipation (Schottky)
T_C = 70 °C
T_A = 25 °C
4.3
1.6^{b, c}
T_A = 70 °C
1.0^{b, c}
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)^{d, e}
T_J, T_stg
- 55 to 150
°C
260
Document Number: 68955
S-82482-Rev. A, 13-Oct-08
www.vishay.com
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