SIA811ADJ Datasheet, PDF (5/12 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET with Schottky Diode

New Product
SiA811ADJ
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS T_A = 25 °C, unless otherwise noted
10
0.5
0.4
I_D = 2.8 A
T_J = 150 °C
1
T_J = 25 °C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Soure-Drain Diode Forward Voltage
0.4
0.3
0.2
T_J = 125 °C
0.1
T_J = 25 °C
0.0
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
20
0.3
I_D = 250 µA
15
0.2
I_D = 1 mA
0.1
10
0.0
5
- 0.1
- 0.2
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
10
* Limited by R_DS(on)
0
0.001 0.01 0.1
1
10
100 1000
Time (s)
Single Pulse Power, Junction-to-Ambient
100 µs
Document Number: 68955
S-82482-Rev. A, 13-Oct-08
1
1 ms
10 ms
100 ms
0.1
1 s, 10 s
100 s, DC
T_A = 25 °C
Single Pulse
BVDSS Limited
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Case
www.vishay.com
5