VS-ST733CL Datasheet, PDF (7/10 Pages) Vishay Siliconix – Metal case with ceramic insulator

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VS-ST733CL Series
Vishay Semiconductors
1E5
Snubber circuit
R_S = 10 Ω
C_S = 0.47 μF
V_D = 80 % V_DRM
1E4
ST733C..L Series
Trapezoidal pulse
tp
T_C = 40°C
di/dt = 50A/μs
1E5
Snubber circuit
R_S = 10 Ω
C_S = 0.47 μF
V_D = 80 % V_DRM
1E4
ST733C..L Series
Trapezoidal pulse
tp
T = 55 °C
di/dt = 50A/μs
500 ^{400 200100 50 Hz}
1E3
1000
1500
2000
2500
3000
5000
1E2
1E1
1E2
1E3
1E4
Pulse Basewidth (μs)
1E3
1E2
1E1
Fig. 15 - Frequency Characteristics
400 ^{200100 50 Hz}
500
1000
1500
2000
2500
3000
1E2
1E3
1E4
Pulse Basewidth (μs)
1E5
tp
1E4
1E3
1E2
1E1
1E1
ST733C..L Series
Sinusoidal pulse
20 joules per pulse
10
35
2
1
0.5
0.4
0.3
1E5
ST733C..L Series
Rectangular pulse
t_p ^{di/dt = 50 A/μs}
1E4
20 joules per pulse
10
5
3
1E3
2
1
0.5
1E2
0.4
0.3
1E2
1E3
1E4
Pulse Basewidth (μs)
1E1
1E1
1E2
1E3
1E4
Pulse Basewidth (μs)
Fig. 16 - Maximum On-State Energy Power Loss Characteristics
100
Rectangular gate pulse
a) Recommended load line for
rated di/dt : 20 V, 10 Ω; t_r<= 1 μs
(1) PGM = 10 W, t_p = 20 ms
(2) PGM = 20 W, t_p = 10 ms
(3) PGM = 40 W, t_p = 5 ms
(4) PGM = 60 W, t_p = 3.3 ms
10
b) Recommended load line for
<= 30 % rated di/dt : 10 V, 10 Ω
t_r <= 1 μs
(a)
(b)
1
0.1
0.001
(1) (2) (3) (4)
VGD
IGD
Device: ST733C..L Series
Frequency Limited by PG (AV)
0.01
0.1
1
10
100
Instantaneous Gate Current (A)
Fig. 17 - Gate Characteristics
Revision: 26-Aug-14
7
Document Number: 94378
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