VS-ST733CL Datasheet, PDF (6/10 Pages) Vishay Siliconix – Metal case with ceramic insulator

www.vishay.com
VS-ST733CL Series
Vishay Semiconductors
450
400 ^{ST733C..L Series}
T_J = 125 °C
350
I _TM = 1500 A
300
1000 A
250
200
500 A
150
100
50
0
10 20 30 40 50 60 70 80 90 100
dI_Fdt - Rate of Fall of On-State Current (A/μs)
Fig. 11 - Reverse Recovered Charge Characteristics
250
I_TM= 1500 A
200
1000 A
150
500 A
100
50
ST733C..L Series
T_J = 125 °C
0
10 20 30 40 50 60 70 80 90 100
dI_Fdt - Rate of Fall of Forward Current (A/μs)
Fig. 12 - Reverse Recovered Current Characteristics
1E5
1E4
1E3
1E2
1E1
1E5
Snubber circuit
R_S = 10 Ω
C_S = 0.47 μF
V_D = 80 % V_DRM
1E4
400 ^{200100 50 Hz}
1000
1500
2500
1E3
3000
ST733C..L Series
5000
Sinusoidal pulse
tp ^TC ^{= 40°C}
1E2
1E3
1E4
Pulse Basewidth (μs)
1E2
1E1
Fig. 13 - Frequency Characteristics
Snubber circuit
R_S = 10 Ω
C_S = 0.47 μF
V_D = 80 % V_DRM
1000
1500
2500
400 ^{200 100 50 Hz}
3000
5000
ST733C..L Series
Sinusoidal pulse
tp ^TC ^{= 55 °C}
1E2
1E3
1E4
Pulse Basewidth (μs)
1E5
Snubber circuit
R_S = 10 Ω
C_S = 0.47 μF
V_D = 80 % V_DRM
1E4
ST733C..L Series
Trapezoidal pulse
tp
T_C = 40°C
di/dt = 50A/μs
1E3
1E2
1E1
50 Hz
500 ^{400 200 100}
1000
1500
2000
2500
3000
5000
1E2
1E3
1E4
Pulse Basewidth (μs)
1E5
Snubber circuit
R_S = 10 Ω
C_S = 0.47 μF
V_D = 80 % V_DRM
1E4
ST733C..L Series
Trapezoidal pulse
tp
T_C = 55 °C
di/dt = 50 A/μs
1E3
1E2
1E1
1000 ^{500 400 200100 50 Hz}
1500
2000
2500
3000
1E2
1E3
1E4
Pulse Basewidth (μs)
Fig. 14 - Frequency Characteristics
Revision: 26-Aug-14
6
Document Number: 94378
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000