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VS-ST733CL Datasheet, PDF (2/10 Pages) Vishay Siliconix – Metal case with ceramic insulator
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CURRENT CARRYING CAPABILITY
FREQUENCY
50 Hz
400 Hz
1000 Hz
2500 Hz
Recovery voltage VR
Voltage before turn-on VD
Rise of on-state current dI/dt
Heatsink temperature
Equivalent values for RC circuit
ITM
180° el
2200
1900
2050
1660
1370
1070
500
370
50
VDRM
50
40
55
10/0.47
VS-ST733CL Series
Vishay Semiconductors
ITM
180° el
3580
3100
3600
3130
2900
2450
1220
980
50
VDRM
-
40
55
10/0.47
ITM
100 µs
6800
5920
3750
3240
2120
1780
960
770
50
VDRM
-
40
55
10/0.47
UNITS
A
V
A/μs
°C
Ω/μF
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average on-state
current at heatsink temperature
IT(AV)
Maximum RMS on-state current
IT(RMS)
Maximum peak, one half cycle,
non-repetitive surge current
ITSM
Maximum I2t for fusing
I2t
Maximum I2√t for fusing
I2√t
Maximum peak on-state voltage
VTM
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward slope resistance
High level value of forward slope
resistance
Maximum holding current
Typical latching current
VT(TO)1
VT(TO)2
rt1
rt2
IH
IL
TEST CONDITIONS
180° conduction, half sine wave
double side (single side) cooled
DC at 25 °C heatsink temperature double side cooled
t = 10 ms No voltage
t = 8.3 ms reapplied
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
t = 10 ms 100 % VRRM
t = 8.3 ms reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
ITM = 1700 A, TJ = TJ maximum,
tp = 10 ms sine wave pulse
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum
(I > π x IT(AV)), TJ = TJ maximum
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum
(I > π x IT(AV)), TJ = TJ maximum
TJ = 25 °C, IT > 30 A
TJ = 25 °C, VA = 12 V, Ra = 6 Ω, IG = 1 A
VALUES
940 (350)
55 (85)
1900
20 000
20 950
16 800
17 600
2000
1820
1410
1290
20 000
1.63
1.09
1.20
0.32
0.29
600
1000
UNITS
A
°C
A
kA2s
kA2√s
V
mΩ
mA
Revision: 26-Aug-14
2
Document Number: 94378
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