VS-ST303S04PFN0P Datasheet, PDF (7/11 Pages) Vishay Siliconix – Inverter Grade Thyristors

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VS-ST303SP Series
Vishay Semiconductors
20 joules p er pulse
10
5
3
2
1
0.5
0.4
ST303SSeries
Sinusoidal pulse
tp
ST303SSeries
Rectangular pulse
tp
di/ dt = 50A/ µs
20 joulesper pulse
10
5
3
2
1
0.5
0.4
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1E1
1E2
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Pulse Basewidth (µs)
Pulse Basewidth (µs)
Fig. 14 - Maximum On-State Energy Power Loss Characteristics
100
Rec tangular gate pulse
a) Recommended load line for
rated di/ dt : 20V, 10ohms; tr<=1 µs
b) Recommended load line for
<=30%rated di/ dt : 10V, 10ohms
10 _{tr<=1 µs}
(a )
(b)
(1) PGM = 10W, tp = 20ms
(2) PGM = 20W, tp = 10ms
(3) PGM = 40W, tp = 5ms
(4) PGM = 60W, tp = 3.3ms
1
0.1
0.001
VGD
IGD
0.01
(1) (2) (3) (4)
Device: ST303SSeries Frequency Limited by PG(AV)
0.1
1
10
100
InstantaneousGate Current (A)
Fig. 15 - Gate Characteristics
Revision: 08-Jul-14
7
Document Number: 94375
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