VS-ST303S04PFN0P Datasheet, PDF (3/11 Pages) Vishay Siliconix – Inverter Grade Thyristors

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BLOCKING
PARAMETER
Maximum critical rate of rise of off-state voltage
Maximum peak reverse and off-state leakage
current
VS-ST303SP Series
Vishay Semiconductors
SYMBOL
dV/dt
I_RRM,
I_DRM
TEST CONDITIONS
T_J = T_J maximum, linear to 80 % V_DRM, 
higher value available on request
T_J = T_J maximum, rated V_DRM/V_RRM applied
VALUES
500
UNITS
V/μs
50
mA
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
Maximum DC gate currrent required to trigger
Maximum DC gate voltage required to trigger
Maximum DC gate current not to trigger
Maximum DC gate voltage not to trigger
SYMBOL
P_GM
P_G(AV)
I_GM
+V_GM
-V_GM
I_GT
V_GT
I_GD
V_GD
TEST CONDITIONS
T_J = T_J maximum, f = 50 Hz, d% = 50
T_J = T_J maximum, t_p  5 ms
T_J = 25 °C, V_A = 12 V, R_a = 6 
T_J = T_J maximum, rated V_DRM applied
VALUES
60
10
10
20
5
200
3
20
0.25
UNITS
W
A
V
mA
V
mA
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum operating junction temperature range
T_J
Maximum storage temperature range
T_Stg
Maximum thermal resistance, junction to case
R_thJC
DC operation
Maximum thermal resistance, case to heatsink
R_thCS
Mounting surface, smooth, flat and greased
Mounting force, ± 10 %
Non-lubricated threads
Approximate weight
Case style
See dimensions - link at the end of datasheet
VALUES UNITS
-40 to 125
°C
-40 to 150
0.10
K/W
0.03
48.5
(425)
N·m
(lbf · in)
535
g
TO-209AE (TO-118)
R_thJ-hs CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
TEST CONDITIONS
UNITS
180°
0.011
0.008
120°
0.013
0.014
90°
0.017
0.018
T_J = T_J maximum
K/W
60°
0.025
0.026
30°
0.041
0.042
Note
• The table above shows the increment of thermal resistance R_thJ-hs when devices operate at different conduction angles than DC


Revision: 08-Jul-14
3
Document Number: 94375
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