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| VS-ST303S04PFN0P Datasheet, PDF (2/11 Pages) Vishay Siliconix – Inverter Grade Thyristors | |||
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www.vishay.com
CURRENT CARRYING CAPABILITY
FREQUENCY
50 Hz
400 Hz
1000 Hz
2500 Hz
Recovery voltage VR
Voltage before turn-on VD
Rise of on-state current di/dt
Case temperature
Equivalent values for RC circuit
ITM
180° el
670
470
480
330
230
140
35
-
50
VDRM
50
40
65
10/0.47
VS-ST303SP Series
Vishay Semiconductors
ITM
180° el
1050
940
1021
710
760
470
150
-
50
VDRM
-
40
65
10/0.47
ITM
100 µs
5240
4300
1800
1270
730
430
90
-
50
VDRM
-
40
65
10/0.47
UNITS
A
V
A/μs
°C
ïï¯Î¼F
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state currentï
at case temperature
Maximum RMS on-state current
Maximum peak, one half cycle, ï
non-repetitive surge current
SYMBOL
IT(AV)
IT(RMS)
ITSM
Maximum I2t for fusing
I2t
Maximum I2ït for fusing
Maximum peak on-state voltage
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward slope resistance
High level value of forward slope
resistance
Maximum holding current
Typical latching current
I2ït
VTM
VT(TO)1
VT(TO)2
rt1
rt2
IH
IL
TEST CONDITIONS
180° conduction, half sine wave
DC at 45 °C case temperature
t = 10 ms No voltage
t = 8.3 ms reapplied
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % VRRM ï
reapplied
No voltage
reapplied
Sinusoidal half wave,ï
initial TJ = TJ maximum
t = 10 ms
t = 8.3 ms
100 % VRRM ï
reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
ITM = 1255 A, TJ = TJ maximum, ï
tp = 10 ms sine wave pulse
(16.7 % x ï° x IT(AV) < I < ï° x IT(AV)), TJ = TJ maximum
(I > ï° x IT(AV)), TJ = TJ maximum
(16.7 % x ï° x IT(AV) < I < ï° x IT(AV)), TJ = TJ maximum
(I > ï° x IT(AV)), TJ = TJ maximum
TJ = 25 °C, IT > 30 A
TJ = 25 °C, VA = 12 V, Ra = 6 ï, IG = 1 A
VALUES
300
65
471
7950
8320
6690
7000
316
288
224
204
3160
2.16
1.44
1.46
0.57
0.56
600
1000
UNITS
A
°C
A
kA2s
kA2ïs
V
mï
mA
SWITCHING
PARAMETER
Maximum non-repetitive rate ofï
rise of turned-on current
Typical delay time
Maximum turn-off time
minimum
maximum
SYMBOL
dI/dt
td
tq
TEST CONDITIONS
TJ = TJ maximum, VDRM = Rated VDRMï
ITM = 2 x dI/dt
TJ = 25 °C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 μsï
Resistive load, gate pulse: 10 V, 5 ï source
TJ = TJ maximum, ï
ITM = 550 A, commutating dI/dt = 40 A/μsï
VR = 50 V, tp = 500 μs, dV/dt = 200 V/μs
VALUES
1000
0.80
10
20
UNITS
A/μs
μs
Revision: 08-Jul-14
2
Document Number: 94375
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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