Si5504DC Datasheet, PDF (7/7 Pages) Vishay Siliconix – Complementary 30-V (D-S) MOSFET

Si5504DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
P−CHANNEL
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10^{- 4}
Single Pulse
10^{- 3}
10^{- 2}
10^{- 1}
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 90_C/W
3. T_JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600
2
1
Duty Cycle = 0.5
0.2
0.1
0.1 _0.05
0.02
Normalized Thermal Transient Impedance, Junction-to-Foot
Single Pulse
0.01
10^{- 4}
10^{- 3}
10^{- 2}
10^{- 1}
1
10
Square Wave Pulse Duration (sec)
Document Number: 71056
S-21251—Rev. B, 05-Aug-02
www.vishay.com
2-7