Si5504DC Datasheet, PDF (1/7 Pages) Vishay Siliconix – Complementary 30-V (D-S) MOSFET

Si5504DC
Vishay Siliconix
Complementary 30-V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
N-Channel
30
P-Channel
-30
1206-8 ChipFET
1
S₁
D₁
G₁
D₁
S₂
D₂
G₂
D₂
Bottom View
r_DS(on) (W)
0.085 @ V_GS = 10 V
0.143 @ V_GS = 4.5 V
0.165 @ V_GS = -10 V
0.290 @ V_GS = -4.5 V
I_D (A)
"3.9
"3.0
"2.8
"2.1
D₁
G₁
Marking Code
EA XX
Lot Traceability
and Date Code
Part # Code
S₁
N-Channel MOSFET
Ordering Information: Si5504DC-T1
S₂
G₂
D₂
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
N-Channel
P-Channel
Parameter
Symbol ^{5 secs Steady State 5 secs Steady State}
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
T_A = 25_C
T_A = 85_C
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
T_A = 25_C
T_A = 85_C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)^{b, c}
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
"3.9
"2.8
1.8
2.1
1.1
30
"20
"2.9
"2.8
"2.1
"2.0
"10
0.9
-1.8
1.1
2.1
0.6
1.1
-55 to 150
260
-30
"2.1
"1.5
-0.9
1.1
0.6
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
t v 5 sec
50
Steady State
R_thJA
90
Steady State
R_thJF
30
60
110
_C/W
40
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. See Reliability Manual for profile. The ChipFET/PowerPAK is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the
singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder
interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71056
S-21251—Rev. B, 05-Aug-02
www.vishay.com
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