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| Si5504DC Datasheet, PDF (2/7 Pages) Vishay Siliconix – Complementary 30-V (D-S) MOSFET | |||
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Si5504DC
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 mA
VDS = VGS, ID = -250 mA
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = 0 V, VGS = "20 V
VDS = 24 V, VGS = 0 V
VDS = -24 V, VGS = 0 V
VDS = 24 V, VGS = 0 V, TJ = 85_C
VDS = -24 V, VGS = 0 V, TJ = 85_C
VDS w 5 V, VGS = 10 V
VDS p -5 V, VGS = -10 V
VGS = 10 V, ID = 2.9 A
VGS = -10 V, ID = -2.1 A
VGS = 4.5 V, ID = 2.2 A
VGS = -4.5 V, ID = -1.6 A
VDS = 15 V, ID = 2.9 A
VDS = -15 V, ID = -2.1 A
IS = 0.9 A, VGS = 0 V
IS = -0.9 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
N-Channel
VDS = 15 V, VGS = 10 V, ID = 2.9 A
Qgs
P-Channel
VDS = -15 V, VGS = -10 V, ID = -2.1 A
Qgd
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Source-Drain
Reverse Recovery Time
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%,
b. Guaranteed by design, not subject to production testing.
N-Channel
VDD = 15 V, RL = 15 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
P-Channel
VDD = -15 V, RL = 15 W
ID ^ -1 A, VGEN = -10 V, RG = 6 W
IF = 0.9 A, di/dt = 100 A/ms
IF = -0.9 A, di/dt = 100 A/ms
Min Typ Max Unit
N-Ch
1.0
V
P-Ch -1.0
N-Ch
P-Ch
"100
nA
"100
N-Ch
1
P-Ch
N-Ch
-1
mA
5
P-Ch
-5
N-Ch
10
A
P-Ch
-10
N-Ch
0.072 0.085
P-Ch
N-Ch
0.137 0.165
W
0.120 0.143
P-Ch
0.240 0.290
N-Ch
6
S
P-Ch
3
N-Ch
P-Ch
0.8
1.2
V
-0.8
-1.2
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
5
7.5
5.5
6.6
0.8
nC
1.2
1.0
0.9
7
11
8
12
12
18
11
18
12
18
ns
14
21
7
11
8
12
40
80
40
80
www.vishay.com
2-2
Document Number: 71056
S-21251âRev. B, 05-Aug-02
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