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SI8812DB Datasheet, PDF (7/9 Pages) Vishay Siliconix – N-Channel 20 V (D-S) MOSFET
New Product
PACKAGE OUTLINE
MICRO FOOT 0.8 mm x 0.8 mm: 4-BUMP (2 x 2, 0.4 mm PITCH)
4xØb
xxx
AG
Mark on Backside of die
4 x Ø 0.205 to 0.225 Note 4
Solder Mask ~ Ø 0.215
S
S
D
G
s
e
D
2
3
Si8812DB
Vishay Siliconix
1
4
e
Recommended Land
Notes (Unless otherwise specified):
1. All dimensions are in millimeters.
2. Four (4) solder bumps are lead (Pb)-free 95.5Sn/3.5Ag/0.7Cu with diameter Ø0.165 mm to Ø 0.185 mm.
3. Backside surface is coated with a Ti/Ni/Ag layer.
4. Non-solder mask defined copper landing pad.
·5. is location of pin 1.
Dim.
Min.
Millimetersa
Nom.
A
0.314
0.357
A1
0.127
0.157
A2
0.187
0.200
b
0.165
0.175
e
0.400
s
0.180
0.200
D
0.760
0.800
Notes:
a. Use millimeters as the primary measurement.
Max.
0.400
0.187
0.213
0.185
0.220
0.840
Min.
0.0124
0.0050
0.0074
0.0064
0.0070
0.0299
Inches
Nom.
0.0141
0.0062
0.0079
0.0068
0.0157
0.0078
0.0314
Max.
0.0157
0.0074
0.0084
0.0072
0.0086
0.0330
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63682.
Document Number: 63682
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
S12-2050-Rev. A, 27-Aug-12
7
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000