SI8812DB Datasheet, PDF (3/9 Pages) Vishay Siliconix – N-Channel 20 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
20
10
V_GS = 5 V thru 2.5 V
V_GS = 2 V
16
8
Si8812DB
Vishay Siliconix
12
8
4
0
0.0
0.14
0.11
V_GS = 1.5 V
V_GS = 1 V
0.5
1.0
1.5
2.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
V_GS = 1.8 V
0.08
0.05
0.02
0
8
V_GS = 3.7 V
V_GS = 2.5 V
V_GS = 4.5 V
4
8
12
16
20
I_D - Drain Current (A)
On-Resistance vs. Drain Current
I_D = 1 A
6
V_DS = 10 V
4
V_DS = 5 V
V_DS = 16 V
2
0
0
2
4
6
8
10
12
Q_g - Total Gate Charge (nC)
Gate Charge
6
4
2
0
0.0
800
T_C = 25 °C
T_C = 125 °C
T_C = - 55 °C
0.4
0.8
1.2
1.6
2.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
600
C_iss
400
200
C_oss
C_rss
0
0
4
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.5
I_D = 1 A
1.4
1.3
V_GS = 4.5 V, 3.7 V
1.2
1.1
V_GS = 2.5 V, 1.8 V
1.0
0.9
0.8
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 63682
For technical questions, contact: [e-mail]
www.vishay.com
S12-2050-Rev. A, 27-Aug-12
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000