SI8812DB Datasheet, PDF (5/9 Pages) Vishay Siliconix – N-Channel 20 V (D-S) MOSFET

New Product
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
4
0.8
3
0.6
2
0.4
1
0.2
Si8812DB
Vishay Siliconix
0
0
25
50
75
100 125 150
T_A - Ambient Temperature (°C)
Current Derating*
Note:
When mounted on 1" x 1" FR4 with full copper.
0.0
25
50
75
100
125
150
T_A - Ambient Temperature (°C)
Power Derating
* The power dissipation P_D is based on T_J(max.) = 150 °C, using junction-to-ambient thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 63682
For technical questions, contact: [e-mail]
www.vishay.com
S12-2050-Rev. A, 27-Aug-12
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000