SI4511DY_09 Datasheet, PDF (7/12 Pages) Vishay Siliconix – N- and P-Channel 20-V (D-S) MOSFET

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
0.10
Si4511DY
Vishay Siliconix
T_J = 150 °C
10
T_J = 25 °C
0.08
0.06
0.04
I_D = 6.2 A
0.02
1
0.0
0.3
0.6
0.9
1.2
1.5
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.6
0.4
0.2
I_D = 250 µA
0.0
- 0.2
- 0.4
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by R_DS(on)*
0.00
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
30
25
20
15
10
5
0
10 ^-2
10 ^-1
1
10
100 600
Time (s)
Single Pulse Power
I_DM Limited
10
1
I_D(on)
Limited
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
0.1
T_C = 25 °C
Single Pulse
BVDSS Limited
P(t) = 1
P(t) = 10
DC
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_DS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area
Document Number: 72223
S09-0867-Rev. E, 18-May-09
www.vishay.com
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