SI4511DY_09 Datasheet, PDF (2/12 Pages) Vishay Siliconix – N- and P-Channel 20-V (D-S) MOSFET

Si4511DY
Vishay Siliconix
SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Gate Threshold Voltage
V_GS(th)
V_DS = V_GS, I_D = 250 µA
V_DS = V_GS, I_D = - 250 µA
N-Ch
P-Ch
0.6
- 0.6
1.8
V
- 1.4
Gate-Body Leakage
I_GSS
V_DS = 0 V, V_GS = ± 16 V
V_DS = 0 V, V_GS = ± 12 V
N-Ch
P-Ch
± 100
nA
± 100
V_DS = 20 V, V_GS = 0 V
N-Ch
1
Zero Gate Voltage Drain Current
I_DSS
V_DS = - 20 V, V_GS = 0 V
V_DS = 20 V, V_GS = 0 V, T_J = 55 °C
P-Ch
N-Ch
-1
µA
5
V_DS = - 20 V, V_GS = 0 V, T_J = 55 °C P-Ch
-5
On-State Drain Current^b
I_D(on)
V_DS = 5 V, V_GS = 10 V
V_DS = - 5 V, V_GS = - 4.5 V
N-Ch
40
P-Ch - 40
A
V_GS = 10 V, I_D = 9.6 A
N-Ch
0.0115 0.0145
Drain-Source On-State Resistance^{b R}DS(on)
V_GS = - 4.5 V, I_D = - 6.2 A
V_GS = 4.5 V, I_D = 8.6 A
P-Ch
N-Ch
0.022 0.033
Ω
0.0135 0.017
V_GS = - 2.5 V, I_D = - 5 A
P-Ch
0.035 0.050
Forward Transconductance^b
g_fs
V_DS = 15 V, I_D = 9.6 A
V_DS = - 15 V, I_D = - 6.2 A
N-Ch
P-Ch
33
17
S
Diode Forward Voltag^b
V_SD
I_S = 1.7 A, V_GS = 0 V
I_S = - 1.7 A, V_GS = 0 V
N-Ch
P-Ch
0.8
1.2
V
- 0.8
- 1.2
Dynamic^a
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q_g
N-Channel
N-Ch
P-Ch
V_DS = 10 V, V_GS = 4.5 V, I_D = 9.6 A _N-Ch
Q_gs
P-Channel
P-Ch
Q_gd
V_DS = - 10 V, V_GS = - 4.5 V, I_D = - 6.2 A ^N-Ch
P-Ch
11.5
18
17
20
3.7
nC
4.1
3.3
4.3
Turn-On Delay Time
Rise Time
t_d(on)
t_r
N-Channel
V_DD = 10 V, R_L = 10 Ω
I_D ≅ 1 A, V_GEN = 10 V, R_g = 6 Ω
N-Ch
P-Ch
N-Ch
P-Ch
12
20
25
40
12
20
30
45
Turn-Off Delay Time
Fall Time
t_d(off)
t_f
P-Channel
V_DD = - 10 V, R_L = 10 Ω
I_D ≅ - 1 A, V_GEN = - 4.5 V, R_g = 6 Ω
N-Ch
P-Ch
N-Ch
P-Ch
55
85
70
105
ns
15
25
50
75
Source-Drain Reverse Recovery Time t_rr
I_F = 1.7 A, dI/dt = 100 A/µs
I_F = - 1.7 A, dI/dt = 100 A/µs
N-Ch
P-Ch
50
100
40
80
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 72223
S09-0867-Rev. E, 18-May-09