SI4511DY_09 Datasheet, PDF (1/12 Pages) Vishay Siliconix – N- and P-Channel 20-V (D-S) MOSFET

Si4511DY
Vishay Siliconix
N- and P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
N-Channel
20
0.0145 at V_GS = 10 V
0.017 at V_GS = 4.5 V
P-Channel
- 20
0.033 at V_GS = - 4.5 V
0.050 at V_GS = - 2.5 V
I_D (A)
9.6
8.6
- 6.2
-5
S_{1 1}
G_{1 2}
S_{2 3}
G_{2 4}
SO-8
8 ^D1
7 ^D1
6 ^D2
5 ^D2
Top View
Ordering Information: Si4511DY-T1-E3 (Lead (Pb)-free)
Si4511DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• Compliant to RoHS directive 2002/95/EC
APPLICATIONS
• Level Shift
• Load Switch
D₁
G₁
S₁
S₂
G₂
D₂
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
N-Channel
P-Channel
Parameter
Symbol
10 s Steady State 10 s Steady State Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
20
V_GS
± 16
- 20
V
± 12
Continuous Drain Current (T_J = 150 °C)^{a, b}
T_A = 25 °C
T_A = 70 °C
I_D
9.6
7.7
7.2
- 6.2
- 4.6
5.8
- 4.9
- 3.7
A
Pulsed Drain Current
I_DM
40
- 40
Continuous Source Current (Diode Conduction)^a
I_S
1.7
0.9
- 1.7
- 0.9
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 70 °C
P_D
2
1.3
1.1
0.7
2
1.3
1.1
0.7
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t ≤ 10 s.
t ≤ 10 s
Steady State
Steady State
Symbol
R_thJA
R_thJF
N-Channel
Typ.
Max.
50
62.5
85
110
30
40
P-Channel
Typ.
Max.
50
62.5
90
110
30
35
Unit
°C/W
Document Number: 72223
S09-0867-Rev. E, 18-May-09
www.vishay.com
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