SI4500BDY_09 Datasheet, PDF (7/12 Pages) Vishay Siliconix – Complementary MOSFET Half-Bridge (N- and P-Channel)

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
0.20
T_J = 150 °C
10
0.16
0.12
I_D = 1 A
T_J = 25 °C
0.08
Si4500BDY
Vishay Siliconix
I_D = 5.3 A
0.04
1
0.0
0.3
0.6
0.9
1.2
1.5
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.4
0.3
0.2
I_D = 250 µA
0.1
0.0
- 0.1
- 0.2
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by R_(DS)on*
10
0.00
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
80
70
60
50
40
30
20
10
0
0.001 0.01
0.1
1
10
Time (s)
Single Pulse Power
100 600
I_DM Limited
P(t) = 0.0001
1
I_D(on)
Limited
0.1
T_A = 25 °C
Single Pulse
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
DC
BVDSS Limited
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area
Document Number: 72281
S09-0705-Rev. D, 27-Apr-09
www.vishay.com
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