SI4500BDY_09 Datasheet, PDF (6/12 Pages) Vishay Siliconix – Complementary MOSFET Half-Bridge (N- and P-Channel)

Si4500BDY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
20
V_GS = 5 V thru 3.5 V
3V
16
16
12
12
2.5 V
8
8
T_C = - 55 °C
25 °C
125 °C
4
0
0
0.20
2V
1.5 V
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.16
0.12
V_GS = 2.5 V
0.08
0.04
V_GS = 4.5 V
0.00
0
4
8
12
16
20
I_D - Drain Current (A)
On-Resistance vs. Drain Current
4
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
800
700
C_iss
600
500
400
300
C_oss
200
100 ^Crss
0
0
4
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
5
V_DS = 10 V
I_D = 5.3 A
4
1.6
V_GS = 4.5 V
I_D = 5.3 A
1.4
3
1.2
2
1.0
1
0.8
0
012345678
Q_g - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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6
Document Number: 72281
S09-0705-Rev. D, 27-Apr-09