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SI4500BDY_09 Datasheet, PDF (5/12 Pages) Vishay Siliconix – Complementary MOSFET Half-Bridge (N- and P-Channel)
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N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
Si4500BDY
Vishay Siliconix
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 75 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
10 -2
10 -1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Document Number: 72281
S09-0705-Rev. D, 27-Apr-09
www.vishay.com
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