DG636 Datasheet, PDF (7/10 Pages) Vishay Siliconix – 0.5 pC Charge Injection, 100 pA Leakage, Dual SPDT Analog Switch

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TYPICAL CHARACTERISTICS 25 °C
100000
V+ = + 5.0 V
V- = - 5.0 V
10000
1000
100
10
I_D(on)
I_D(off)
I_S(off)
10000
V+ = 13.2 V
V- = 0 V
1000
100
I_D(on)
10
DG636
Vishay Siliconix
I_D(off)
I_S(off)
1
- 60 - 40 - 20 0 20 40 60 80 100 120 140
Temperature (°C)
Leakage Current vs. Temperature
10
0
LOSS
- 10
- 20
V+ = ± 5.0 V
- 30
R_L = 50 Ω
- 40
- 50
OIRR
- 60
X_TALK
- 70
- 80
- 90
- 100
100K
1M
10M
100M
1G
Frequency (Hz)
Insertion Loss, Off-Isolation, Crosstalk
vs. Frequency
100
R_L = 600 Ω
10
V_Signal = 1 V_RMS
1
V+ = 3.0 V
V+ = 5.0 V
V± = ± 5.0 V
0.1
0.01
0.001
10
100
1000
10000
100000
Frequency (Hz)
Total Harmonic Distortion vs. Frequency
Document Number: 69901
S-80239-Rev. B, 04-Feb-08
1
- 60 - 40 - 20 0 20 40 60 80 100 120 140
Temperature (°C)
Leakage Current vs. Temperature
0.8
0.6 ^{T = 25 °C}
C_L = 1 nF
0.4
0.2
0
- 0.2
- 0.4
- 0.6
V+ = + 5.0 V
V- = - 5.0 V
V+ = + 3.0 V
V- = 0 V
V+ = + 5.0 V
V- = 0 V
- 0.8
-5 -4 -3 -2 -1 0 1 2 3 4 5
V_S - Analog Voltage (V)
Charge Injection vs. Analog Voltage
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
2
4
6
8
10
12
14
V+ - Supply Voltage (V)
Switching Threshold vs. Supply Voltage
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7