DG636 Datasheet, PDF (5/10 Pages) Vishay Siliconix – 0.5 pC Charge Injection, 100 pA Leakage, Dual SPDT Analog Switch

New Product
DG636
Vishay Siliconix
SPECIFICATIONS FOR SINGLE SUPPLY
Parameter
Analog Switch
Symbol
Test Conditions
Unless Otherwise Specified
V+ = 3 V, V- = 0 V
V_{IN A0, A1 and ENABLE} = 1.4 V, 0.6 V^a _Temp.^b
Analog Signal Range^e
V_ANALOG
Full
On-Resistance
r_DS(ON)
I_S = 1 mA, V_D = + 1.5 V
Room
Full
On-Resistance Match
Δr_ON
I_S = 1 mA, V_D = + 1.5 V
Room
Full
Switch Off Leakage Current
I_S(off)
I_D(off)
V+ = 3.0 V, V- = 0 V
V_D = 1 V/3.0 V, V_S = 3.0 V/1 V
Room
Full
Room
Full
Channel On Leakage Current
Digital Control
I_D(on)
V+ = 3.0 V, V- = 0 V
V_S = V_D = 1 V/3.0 V
Room
Full
Input Current, V_IN Low
I_L
V_{IN A0, A1 and ENABLE}
Full
Under Test = 0.6 V
Input Current, V_IN High
I_H
V_{IN A0, A1 and ENABLE}
Full
Under Test = 1.4 V
Input Capacitance
C_IN
Dynamic Characteristics
f = 1 MHz
Room
Transition Time
Enable Turn-On Time
Enable Turn-Off Time
t_TRANS
t_ON(EN)
t_OFF(EN)
V_S(CLOSE) = 3.0 V, V_S(OPEN) = 0.0 V,
R_L = 300 Ω, C_L = 35 pF
Room
Full
Room
Full
Room
Full
Break-Before-Make-Time
Charge Injection
Off-Isolation^e
Crosstalk^e
Bandwidth^e
Total Harmonic Distortion
Source Off Capacitance^e
Drain Off Capacitance^e
Channel On Capacitance^e
Power Supplies
t_BMM
Q
OIRR
X_TALK
BW
THD
C_S(off)
C_D(off)
C_D(on)
C_L = 1 nF, R_GEN = 0 Ω, V_GEN = 0 V
f = 10 MHz, R_L = 50 Ω, C_L = 5 pF
R_L = 50 Ω
Signal = 1 V_RMS, 20 Hz to 20 kHz,
R_L = 600 Ω
Room
Full
Full
Room
Room
Room
Room
f = 1 MHz
Room
Power Supply Current
I+
Room
Full
Negative Supply Current
I-
V_IN = 0 V, or V+
Room
Full
Ground Current
I_GND
Room
Full
Typ.^c
200
5
± 0.01
± 0.01
± 0.01
0.005
0.005
4.3
95
77
35
45
1.2
- 57
- 93
442
0.09
2.5
6.4
11.7
0.001
- 0.001
- 0.001
- 40 to + 125 °C - 40 to + 85 °C
Min.^d Max.^d Min.^d Max.^d
3
3
245
245
325
290
6
11
13
6
- 0.1 0.1 - 0.1 0.1
- 18 18 - 0.5 0.5
- 0.1 0.1 - 0.1 0.1
- 18 18 - 0.5 0.5
- 0.1 0.1 - 0.1 0.1
- 18 18 - 0.5 0.5
-1
1
-1
1
-1
1
-1
1
130
130
190
160
108
108
161
131
76
76
112
88
5
5
0.5
0.5
1
1
- 0.5
-1
- 0.5
-1
- 0.5
-1
- 0.5
-1
Unit
V
Ω
nA
µA
pF
ns
pC
dB
MHz
%
pF
µA
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 69901
S-80239-Rev. B, 04-Feb-08
www.vishay.com
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