VS-ST300SPBF Datasheet, PDF (6/8 Pages) Vishay Siliconix – Center amplifying gate

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VS-ST300SPbF Series
Vishay Semiconductors
100
Rectangular gate pulse
a) Recommended load line for
rated di/ dt : 20V, 10ohms; tr<=1 µs
b) Recommended load line for
<=30% rated di/ dt : 10V, 10ohms
10 _{tr<=1 µs}
(a)
(b)
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms
1
0.1
0.001
VGD
IGD
0.01
(1) (2) (3) (4)
Device: ST300SSeries
Frequency Limited by PG(AV)
0.1
1
10
100
InstantaneousGate Current (A)
Fig. 9 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code _{VS- ST 30 0 S 20 P 0 - PbF}
1
2
3
4
5
6
7
8
9 10
1 - Vishay Semiconductors product
2 - Thyristor
3 - Essential part number
4 - 0 = Converter grade
5 - S = Compression bonding stud
6 - Voltage code x 100 = V_RRM (see Voltage Ratings table)
7 - P = Stud base 3/4" 16UNF-2A threads
M = Stud base metric threads (M24 x 1.5)
8 - 0 = Eyelet terminals (gate and auxiliary cathode leads)
1 = Fast-on terminals (gate and auxiliary cathode leads)
3 = Threaded top terminal 3/8" 24UNF-2A
9 - Critical dV/dt: None = 500 V/µs (standard value)
L = 1000 V/µs (special selection)
10 - None = Standard production
- PbF = Lead (Pb)-free
Dimensions
LINKS TO RELATED DOCUMENTS
www.vishay.com/doc?95084
Revision: 08-Jul-14
6
Document Number: 94406
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