VS-ST300SPBF Datasheet, PDF (3/8 Pages) Vishay Siliconix – Center amplifying gate

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TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
DC gate current required to trigger
DC gate voltage required to trigger
DC gate current not to trigger
DC gate voltage not to trigger
VS-ST300SPbF Series
Vishay Semiconductors
SYMBOL
P_GM
P_G(AV)
I_GM
+ V_GM
- V_GM
I_GT
V_GT
TEST CONDITIONS
VALUES
UNITS
TYP. MAX.
T_J = T_J maximum, t_p  5 ms
T_J = T_J maximum, f = 50 Hz, d% = 50
T_J = T_J maximum, t_p  5 ms
10.0
W
2.0
3.0
A
T_J = T_J maximum, t_p  5 ms
20
V
5.0
T_J = -40 °C
200 -
T_J = 25 °C
T_J = 125 °C
T_J = -40 °C
T_J = 25 °C
100 200 mA
Maximum required gate trigger/
current/voltage are the lowest ⁵⁰
-
value which will trigger all units _2.5
-
12 V anode to cathode applied
1.8 3
V
T_J = 125 °C
1.1 -
I_GD
Maximum gate current/voltage
not to trigger is the maximum
10
mA
T_J = T_J maximum value which will not trigger any
V_GD
unit with rated V_DRM anode to
cathode applied
0.25
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum operating junction temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to case
Maximum thermal resistance, case to heatsink
T_J
T_Stg
R_thJC
R_thCS
DC operation
Mounting surface, smooth, flat and greased
Mounting torque, ± 10 %
Non-lubricated threads
Approximate weight
Case style
See dimensions - link at the end of datasheet
VALUES UNITS
-40 to 125
°C
-40 to 150
0.10
K/W
0.03
48.5
(425)
N·m
(lbf · in)
535
g
TO-209AE (TO-118)
R_thJC CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
TEST CONDITIONS
180°
0.011
0.008
120°
0.013
0.014
90°
0.017
60°
0.025
0.018
0.026
T_J = T_J maximum
30°
0.041
0.042
Note
• The table above shows the increment of thermal resistance R_thJC when devices operate at different conduction angles than DC
UNITS
K/W
Revision: 08-Jul-14
3
Document Number: 94406
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