VS-ST300SPBF Datasheet, PDF (1/8 Pages) Vishay Siliconix – Center amplifying gate

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VS-ST300SPbF Series
Vishay Semiconductors
Phase Control Thyristors
(Stud Version), 300 A
TO- 209AE (TO-118)
PRODUCT SUMMARY
I_T(AV)
V_DRM/V_RRM
V_TM
I_GT
T_J
Package
Diode variation
300 A
400 V, 2000 V
1.28 V
200 mA
-40 °C to 125 °C
TO-209AE (TO-118)
Single SCR
FEATURES
• Center amplifying gate
• International standard case TO-209AE (TO-118)
• Hermetic metal case with ceramic insulator
• Threaded studs UNF 3/4"-16UNF-2A or
ISO M24 x 1.5
• Compression bonded encapsulation for heavy duty
operations such as severe thermal cycling
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• DC motor controls
• Controlled DC power supplies
• AC controllers

MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
I_T(AV)
I_T(RMS)
I_TSM
I²t
V_DRM/V_RRM
t_q
T_J
T_C
50 Hz
60 Hz
50 Hz
60 Hz
Typical
VALUES
300
75
470
8000
8380
320
292
400 to 2000
100
-40 to 125
UNITS
A
°C
A
kA²s
V
μs
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
V_DRM/V_RRM, MAXIMUM REPETITIVE
PEAK AND OFF-STATE VOLTAGE
V
04
400
08
800
12
VS-ST300S
16
1200
1600
18
1800
20
2000
V_RSM, MAXIMUM NON-REPETITIVE
PEAK VOLTAGE
V
500
900
1300
1700
1900
2100
I_DRM/I_RRM MAXIMUM AT
T_J = T_J MAXIMUM
mA
50
Revision: 08-Jul-14
1
Document Number: 94406
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000