VS-SD263CS50L Datasheet, PDF (6/8 Pages) Vishay Siliconix – High current capability

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1E 4
tp
1E 3
1E 2
1E1
100 ^{50 Hz}
20 0
400
600
1 00 0
1500
20 0 0
3000
4 00 0
SD 263C ..S50L Series
Tr apezoi dal Pu ls e
TC = 5 5°C, VRRM= 15 00 V
d v/ dt = 10 0 0V / us ,
d i/d t = 300A /us
1E2
1E 3
1E4
Pulse Basewidth ( µs)
Fig. 18 - Frequency Characteristics
1E 4
VS-SD263C..S50L Series
Vishay Semiconductors
1E4
SD 263C ..S50L S eri es
T rape z oi dal Pu lse
T_J = 1 2 5°C , V_RRM= 1 5 0 0 V
dv/d t = 1000V/µs
di /d t = 100A /µ s
1E3
tp
1 0 jo u le s pe r pu lse
6
4
2
1
0.5
0.3
1E2
1E1
1E 2
1E3
1E4
Pulse Basew idth (µs)
Fig. 19 - Maximum Total Energy Loss
Per Pulse Characteristics
tp
100 50 Hz
1E 3
600 ^{400 200}
1000
1 5 00
2 00 0
1E 2
1E1
3 00 0
4000
6 0 00
1E2
SD 2 6 3 C.. S5 0 L Se rie s
T rap e zoi da l Pul se
T_C = 5 5°C , V RRM = 1 5 0 0 V
dv/dt = 1000V/u s,
di /d t = 100A / u s
1E 3
1E4
Pulse Basew idth (µs)
Fig. 20 - Frequency Characteristics
ORDERING INFORMATION TABLE
Device code VS- SD 26 3 C 45 S50 L
1
1-
2^-
3^-
4^-
5^-
6^-
7^-
8-
2
3
4
5
6
7
8
Vishay Semiconductors product
Diode
Essential part number
3 = Fast recovery
C = Ceramic PUK
Voltage code x 100 = V_RRM (see Voltage Ratings table)
t_rr code
L = PUK case DO-200AB (B-PUK)
Dimensions
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www.vishay.com/doc?95246
Revision: 04-Apr-14
6
Document Number: 93173
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