VS-SD263CS50L Datasheet, PDF (5/8 Pages) Vishay Siliconix – High current capability

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9
S D 2 6 3 C ..S 5 0 L Se rie s
8
T_J = 1 2 5 °C ; V _r > 1 0 0 V
7
I _FM = 1000 A
6
Sine Pu lse
500 A
5
150 A
4
3
2
10
10 0
10 0 0
Rate O f Fall O f Fo rw ard C urre nt - di/dt (A /µs)
Fig. 12 - Recovery Time Characteristics
1 40 0
1 20 0
I _FM = 1000 A
Sin e Pulse
1 00 0
8 00
6 00
500 A
150 A
4 00
SD 2 6 3 C ..S 5 0 L Se rie s
2 00
T_J = 1 2 5 ° C ; V _r > 1 0 0 V
0
0 50 100 150 200 250 300
R ate O f Fall O f Fo rwa rd Curre nt - d i/dt ( A/µs)
Fig. 13 - Recovery Charge Characteristics
60 0
I _FM = 1000 A
50 0
Sine Pu lse
500 A
40 0
150 A
30 0
20 0
S D 2 6 3 C ..S5 0 L S e r ie s
10 0
T_J = 1 2 5 °C ; V _r > 1 0 0 V
0
0 50 100 150 200 250 300
Rate O f Fall O f Fo rw ard C urre nt - d i/dt (A /µs)
Fig. 14 - Recovery Current Characteristics
VS-SD263C..S50L Series
Vishay Semiconductors
1E4
10 jo ule s pe r pu lse
6
4
2
1
0 .5
1E3
0 .3
1E2
1E 1
SD 263C..S50L Series
Sinu soida l Pu lse
tp
T_J = 1 2 5°C , V_RRM= 1 5 0 0 V
d v/d t = 1000V/µs
1E2
1E3
Pulse Basew idth ( µs)
1E4
Fig. 15 - Maximum Total Energy Loss Per Pulse Characteristics
1E4
1500 ^{1000 400 200 100 50 Hz}
2 0 00
1E3
3000
1E2
1E 1
4000
6 00 0
10000
SD 263C ..S50L Series
Sinu soid al Pu l se
TC = 5 5° C , V RR M= 1 5 0 0 V
tp
d v/dt = 1000V/us
1E2
1E3
1E 4
Pulse Basew idth (µs)
Fig. 16 - Frequency Characteristics
1E4
1E3
SD 263C ..S50L Ser ies
T rap ezoid al P uls e
T_J = 1 2 5°C , V _RRM = 1 5 0 0 V
tp
d v/dt = 1000V /µ s
d i/d t = 300A /µ s
1 0 jo ule s pe r pu lse
6
4
2
1
0.5
0.3
1E2
1E1
1E 2
1E3
1E4
Pulse Basew idth (µs)
Fig. 17 - Maximum Total Energy Loss
Per Pulse Characteristics
Revision: 04-Apr-14
5
Document Number: 93173
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