VS-SD263CS50L Datasheet, PDF (4/8 Pages) Vishay Siliconix – High current capability

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VS-SD263C..S50L Series
Vishay Semiconductors
55 0 0
A t A ny Ra ted Lo a d C o nd itio n A nd W ith
5 0 0 0 ^{5 0 % R a te d V R RMA p p lie d F o llo w in g S u rg e}
In it ia l T_J = 1 2 5 °C
45 0 0
@ 60 Hz 0.0083 s
40 0 0
@ 50 Hz 0.0100 s
35 0 0
30 0 0
25 0 0
20 0 0
1 5 0 0 S D 2 6 3 C ..S5 0 L S e r ie s
10 0 0
1
10
1 00
N um b er O f E qua l A m p litude H alf C yc le C urren t Pulse s (N )
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
1 0 00 0
1 0 00
T_J = 25°C
T_J = 125°C
SD263C..S50L Series
10 0
123 45 67 8
Instantan eous Forw ard Voltage (V )
Fig. 9 - Forward Voltage Drop Characteristics
6 0 00
5 0 00
4 0 00
M a xim u m N o n R e pe tit iv e Su rg e C u rre n t
V e r su s P ulse Tr ain D ura tio n .
In itial T_J = 1 2 5°C
N o V o lt ag e R e a pp lie d
5 0 % R at e d V _{RR M} Re ap plie d
3 0 00
2 0 00
S D 2 6 3 C ..S5 0L Se rie s
1 0 00
0.0 1
0.1
1
Pulse Train Duration (s)
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
1
Steady State V alue
R _{th J- hs} = 0 .1 1 K/ W
(S in gle Sid e C o o le d )
0 .1
R _{th J- hs} = 0 .0 5 K/ W
( D o u b le S id e C o o le d )
( D C O p e ra t io n )
0 .01
SD 263C ..S50L Se ries
0 .0 01
0.0 0 1
0.0 1
0 .1
1
10
Sq u a r e W a v e P u lse D u rat io n ( s)
Fig. 10 - Thermal Impedance Z_thJ-hs Characteristic
500
450
400
350
300
250
200
150
100
50
0
0
V
FP
I
T_J = 1 2 5°C
T_J = 2 5°C
SD 263C ..S 50L Series
200 400 600 800 1000 1200 1400 1600 1800 2000
R a t e O f R ise O f Fo rw a rd C u rre n t - d i/ d t (A / u s)
Fig. 11 - Typical Forward Recovery Characteristics
Revision: 04-Apr-14
4
Document Number: 93173
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