Si4818DY Datasheet, PDF (6/8 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4818DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
CHANNEL−2
Gate Charge
10
V_DS = 15 V
8
I_D = 9.5 A
6
On-Resistance vs. Junction Temperature
1.8
1.6
V_GS = 10 V
I_D = 9.5 A
1.4
1.2
4
1.0
0.8
2
0.6
0
0
6
12
18
24
30
Q_g - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
40
0.4
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.05
0.04
T_J = 150_C
10
0.03
T_J = 25_C
0.02
0.01
I_D = 9.5 A
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD - Source-to-Drain Voltage (V)
Threshold Voltage
0.6
0.4
0.2
I_D = 250 mA
- 0.0
- 0.2
- 0.4
- 0.6
- 0.8
- 1.0
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (_C)
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
Single Pulse Power, Junction-to-Ambient
100
80
60
40
20
0
0.001
0.01
0.1
1
10
Time (sec)
www.vishay.com
6
Document Number: 71122
S-31062—Rev. B, 26-May-03