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| Si4818DY Datasheet, PDF (2/8 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode | |||
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Si4818DY
Vishay Siliconix
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED).
Parameter
Symbol
Test Condition
Min
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Diode Forward Voltageb
Dynamica
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = 20 V
VDS = 24 V, VGS = 0 V
VDS = 24 V, VGS = 0 V, TJ = 85_C
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 6.3 A
VGS = 10 V, ID = 9.5 A
VGS = 4.5 V, ID = 5.4 A
VGS = 4.5 V, ID = 8.2 A
VDS = 15 V, ID = 6.3 A
VDS = 15 V, ID = 9.5 A
IS = 1.3 A, VGS = 0 V
IS = 1 A, VGS = 0 V
Ch-1
0.8
Ch-2
1.0
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
20
Ch-2
30
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
trr
Channel-1
VDS = 15 V, VGS = 5 V, ID = 6.3 A
Channel-2
VDS = 15 V, VGS = 5 V, ID = - 9.5 A
Channel-1
VDD = 15 V, RL = 15 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
Channel-2
VDD = 15 V, RL = 15 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
IF = 1.3 A, di/dt = 100 A/ms
IF = 2.2 A, di/dt = 100 mA/ms
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
1.5
Ch-2
0.5
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
Typa Max Unit
V
100
nA
100
1
100
mA
15
2000
A
0.018 0.022
0.0125 0.0155
0.024 0.030
W
0.0165 0.0205
17
S
28
0.7
1.1
V
0.47
0.5
8.0
12
15
23
1.75
nC
5.3
3.2
4.6
6.1
W
2.6
10
20
15
30
5
10
5
10
26
50
44
80
ns
8
16
12
24
30
60
32
70
SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Forward Voltage Drop
VF
Maximum Reverse Leakage Current
Irm
Junction Capacitance
CT
IF = 1.0 A
IF = 1.0 A, TJ = 125_C
Vr = 30 V
Vr = 30 V, TJ = 100_C
Vr = - 30 V, TJ = 125_C
Vr = 10 V
Typ
0.47
0.36
0.004
0.7
3.0
50
Max
0.50
0.42
0.100
10
20
Unit
V
mA
pF
www.vishay.com
2
Document Number: 71122
S-31062âRev. B, 26-May-03
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