Si4818DY Datasheet, PDF (5/8 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4818DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
CHANNEL−1
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 ^{- 4}
10 ^{- 3}
10 ^{- 2}
10 ^{- 1}
Square Wave Pulse Duration (sec)
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
40
40
V_GS = 10 thru 4 V
32
32
1
10
CHANNEL−2
Transfer Characteristics
24
24
T_C = 125_C
16
16
8
0
0
0.030
3V
2V
2
4
6
8
10
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.024
0.018
0.012
V_GS = 4.5 V
V_GS = 10 V
0.006
0.000
0
8
16
24
32
40
I_D - Drain Current (A)
Document Number: 71122
S-31062—Rev. B, 26-May-03
8
25_C
- 55_C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
V_GS - Gate-to-Source Voltage (V)
2500
Capacitance
C_iss
2000
1500
1000
500
C_oss
C_rss
0
0
6
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
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