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| SIA456DJ Datasheet, PDF (6/9 Pages) Vishay Siliconix – N-Channel 200-V (D-S) MOSFET | |||
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SiA456DJ
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10-4
Single Pulse
10-3
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 65
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
C/W
10-2
10-1
1
10
100
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1000
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?68642.
www.vishay.com
6
Document Number: 68642
S-81952-Rev. B, 25-Aug-08
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