SIA456DJ Datasheet, PDF (3/9 Pages) Vishay Siliconix – N-Channel 200-V (D-S) MOSFET

New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2.0
1.0
1.6
V_GS = 5 thru 2 V
0.8
1.2
0.6
0.8
0.4
SiA456DJ
Vishay Siliconix
T_C = - 55 °C
T_C = 25 °C
T_C = 125 °C
0.4
0.0
0
V_GS = 1 V
1
2
3
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
1.6
1.5
1.4
1.3
V_GS = 1.8 V
1.2
V_GS = 2.5 V
1.1
1.0
V_GS = 4.5 V
0.9
0.8
0.0
0.4
0.8
1.2
1.6
2.0
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 1.1 A
8
V_DS = 100 V
V_DS = 160 V
6
4
2
0
0
2
4
6
8
10
12
Q_g - Total Gate Charge (nC)
Gate Charge
0.2
0.0
0.0
600
0.5
1.0
1.5
2.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
500
400
C_iss
300
200
100
C_rss
C_oss
0
0
10
20
30
40
50
V_DS - Drain-to-Source Voltage (V)
Capacitance
2.0
1.8
V_GS = 4.5 V, 2.5 V, I_D = 0.75 A
V_GS = 1.8 V, I_D = 0.1 A
1.6
1.4
1.2
1.0
0.8
0.6
0.4
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 68642
S-81952-Rev. B, 25-Aug-08
www.vishay.com
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