SIA456DJ Datasheet, PDF (4/9 Pages) Vishay Siliconix – N-Channel 200-V (D-S) MOSFET

SiA456DJ
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
3.0
2.5
2.0
1
T_J = 150 °C
T_J = 25 °C
1.5
1.0
I_D = 0.75 A
T_J = 125 °C
T_J = 25 °C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.5
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
1.4
1.3
1.2
1.1
I_D = 250 µA
1.0
0.9
0.8
0.7
0.6
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
30
25
20
15
10
5
0
0.001 0.01 0.1
1
10
100 1000
Time (s)
Single Pulse Power (Junction-to-Ambient)
10
Limited by R_DS(on)*
1
100 µs
1 ms
0.1
10 ms
0.01
T_A = 25 °C
Single Pulse
BVDSS
Limited
100 ms
1s
10 s
DC
0.001
0.1
1
10
100
1000
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
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4
Document Number: 68642
S-81952-Rev. B, 25-Aug-08