SIA441DJ Datasheet, PDF (6/9 Pages) Vishay Siliconix – P-Channel 40 V (D-S) MOSFET

SiA441DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10^-4
NNootteess::
PP_DDMM
Single Pulse
tt₁₁
tt₂₂
11.. DDuuttyy CCyyccllee,, DD ==
tt₁₁
tt₂₂
22.. PPeerr UUnniitt BBaassee == RR_tthhJJAA == 8605 CC//WW
33.. TT_JJMM -- TT_AA == PP_DDMMZZ_{tthhJJAA((tt))}
44.. SSuurrffaaccee MMoouunntteedd
10^-3
10^-2
10^-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.1
10^-4
10^-3
10^-2
10^-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63277.
www.vishay.com
Document Number: 63277
6
S11-1183-Rev. A, 13-Jun-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000