SIA441DJ Datasheet, PDF (4/9 Pages) Vishay Siliconix – P-Channel 40 V (D-S) MOSFET

SiA441DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
T_J = 150 °C
10
T_J = 25 °C
1
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Soure-Drain Diode Forward Voltage
0.14
0.12
I_D = 4.4 A
0.10
0.08
0.06
T_J = 125 °C
0.04
T_J = 25 °C
0.02
0
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
2.2
2.0
1.8
1.6
I_D = 250 μA
1.4
1.2
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by R_DS(on)*
30
25
20
15
10
5
0
0.001 0.01 0.1
1
10
100 1000
Time (s)
Single Pulse Power, Junction-to-Ambient
10
100 μs
1
1 ms
10 ms
100 ms
0.1
1s
T_A = 25 °C
10 s
DC
BVDSS Limited
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
Document Number: 63277
4
S11-1183-Rev. A, 13-Jun-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000