SIA441DJ Datasheet, PDF (3/9 Pages) Vishay Siliconix – P-Channel 40 V (D-S) MOSFET

SiA441DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
30
V_GS = 10 V thru 5 V
25
V_GS = 4 V
20
15
10
5
V_GS = 3 V
0
0
0.5
1
1.5
2
2.5
3
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
10
8
6
T_C = 25 °C
4
2
T_C = 125 °C
T_C = - 55 °C
0
0 0.5 1 1.5 2 2.5 3 3.5 4
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.12
1500
0.10
0.08
0.06
0.04
V_GS = 4.5 V
V_GS = 10 V
0.02
0
5
10
15
20
25
30
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
1200
C_iss
900
600
300
C_oss
C_rss
0
0
8
16
24
32
40
V_DS - Drain-to-Source Voltage (V)
Capacitance
10
I_D = 4.9 A
8
V_DS = 10 V
6
V_DS = 20 V
4
V_DS = 32 V
2
0
0
5
10
15
20
25
Q_g - Total Gate Charge (nC)
Gate Charge
1.8
I_D = 4.4 A
1.6
1.4
1.2
V_GS = 10 V
V_GS = 4.5 V
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 63277
www.vishay.com
S11-1183-Rev. A, 13-Jun-11
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000