SI8424CDB Datasheet, PDF (6/11 Pages) Vishay Siliconix – N-Channel 8 V (D-S) MOSFET

Si8424CDB
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10 ^{- 4}
Single Pulse
10 ^{- 3}
10 ^{- 2}
10 ^-1
1
Square Wave Pulse Duration (s)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 85 °C/W
3. T_JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient (1" x 1" FR4 Board with Full Copper)
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10^-3
Single Pulse
10^-2
10^-1
1
10
Square Wave Pulse Duration (s)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 175 °C/W
3. T_JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient (1" x 1" FR4 Board with Minimum Copper)
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Document Number: 63894
6
S12-2181-Rev. A, 10-Sep-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000