SI8424CDB Datasheet, PDF (2/11 Pages) Vishay Siliconix – N-Channel 8 V (D-S) MOSFET

Si8424CDB
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{a, b}
Maximum Junction-to-Ambient^{c, d}
t=5s
t=5s
Notes:
a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.
b. Maximum under steady state conditions is 85 °C/W.
c. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s.
d. Maximum under steady state conditions is 175 °C/W.
Symbol
R_thJA
R_thJA
Typical
35
85
SPECIFICATIONS (T_J = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
V_DS Temperature Coefficient
V_GS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
V_DS
V_DS/T_J
V_GS(th)/T_J
V_GS(th)
I_GSS
I_DSS
I_D(on)
Drain-Source On-State Resistance^a
R_DS(on)
Forward Transconductance^a
g_fs
Dynamic^b
V_GS = 0 V, I_D = 250 µA
I_D = 250 µA
V_DS = V_GS, I_D = 250 µA
V_DS = 0 V, V_GS = ± 5 V
V_DS = 8 V, V_GS = 0 V
V_DS = 8 V, V_GS = 0 V, T_J = 70 °C
V_DS 5 V, V_GS = 4.5 V
V_GS = 4.5 V, I_D = 2 A
V_GS = 2.5 V, I_D = 1 A
V_GS = 1.8 V, I_D = 1 A
V_GS = 1.5 V, I_D = 1 A
V_GS = 1.2 V, I_D = 0.5 A
V_DS = 4 V, I_D = 2 A
Input Capacitance
C_iss
Output Capacitance
C_oss
Reverse Transfer Capacitance
C_rss
Total Gate Charge
Q_g
Gate-Source Charge
Q_gs
Gate-Drain Charge
Q_gd
Gate Resistance
R_g
Turn-On Delay Time
t_d(on)
Rise Time
t_r
Turn-Off Delay Time
t_d(off)
Fall Time
t_f
Drain-Source Body Diode Characteristics
V_DS = 4 V, V_GS = 0 V, f = 1 MHz
V_DS = 4 V, V_GS = 4.5 V, I_D = 2 A
V_GS = 0.1 V, f = 1 MHz
V_DD = 4 V, R_L = 2 
I_D  2 A, V_GEN = 4.5 V, R_g = 1 
Continuous Source-Drain Diode
I_S
Pulse Diode Forward Current
I_SM
Body Diode Voltage
V_SD
Body Diode Reverse Recovery Time
t_rr
Body Diode Reverse Recovery Charge
Q_rr
Reverse Recovery Fall Time
t_a
Reverse Recovery Rise Time
t_b
T_A = 25 °C
I_S = 2 A, V_GS = 0 V
I_F = 2 A, dI/dt = 100 A/µs, T_J = 25 °C
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.
Min.
8
0.35
5
Maximum
45
110
Unit
°C/W
Typ.
3
- 2.6
0.015
0.016
0.017
0.018
0.022
30
2340
870
600
25
3.3
3.6
3.5
13
19
73
20
0.7
40
20
15
25
Max.
0.8
± 100
1
10
0.020
0.021
0.023
0.028
0.045
40
30
40
150
40
2.3^c
25
1.2
80
40
Unit
V
mV/°C
V
nA
µA
A

S
pF
nC

ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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For technical questions, contact: [e-mail]
Document Number: 63894
2
S12-2181-Rev. A, 10-Sep-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000