SI8424CDB Datasheet, PDF (3/11 Pages) Vishay Siliconix – N-Channel 8 V (D-S) MOSFET

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
25
10
V_GS = 5 V thru 1.5 V
20
8
Si8424CDB
Vishay Siliconix
15
6
10
V_GS = 1 V
5
0
0.0
0.5
1.0
1.5
2.0
2.5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.050
0.040
V_GS = 1.2 V
0.030
0.020
V_GS = 1.5 V
V_GS = 1.8 V
0.010
V_GS = 2.5 V
V_GS = 4.5 V
0.000
0
5
10
15
20
25
I_D - Drain Current (A)
On-Resistance vs. Drain Current
5
4
I_D = 2 A
V_DS = 4 V
3
V_DS = 2 V
2
V_DS = 6.4 V
1
0
0
5
10
15
20
25
30
Q_g - Total Gate Charge (nC)
Gate Charge
4
T_C = 25 °C
2
0
0.0
T_C = 125 °C
T_C = - 55 °C
0.2
0.4
0.6
0.8
1.0
1.2
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
3500
3000
2500
C_iss
2000
1500
1000
500
C_oss
C_rss
0
0
2
4
6
8
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.4
1.3
V_GS = 4.5V, 2.5V, 1.8V, 1.5V;
1.2
I_D = 1.5A
1.1
V_GS = 1.2V; I_D = 0.5A
1.0
0.9
0.8
0.7
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 63894
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www.vishay.com
S12-2181-Rev. A, 10-Sep-12
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000