SI7686DP-T1-E3 Datasheet, PDF (6/9 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

Si7686DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10^-4
10^-3
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R _thJA = 70 °C/W
3. T _JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10^-2
10^-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
600
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10^-4
10^-3
10^-2
10^-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?73451.
www.vishay.com
6
Document Number: 73451
S-80440-Rev. C, 03-Mar-08