SI7686DP-T1-E3 Datasheet, PDF (3/9 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50
10
40
V_GS = 10 thru 4 V
8
Si7686DP
Vishay Siliconix
30
6
20
10
0
0.0
0.0140
3V
0.4
0.8
1.2
1.6
2.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.0120
0.0100
0.0080
V_GS = 4.5 V
V_GS = 10 V
0.0060
0.0040
0
10
20
30
40
50
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 13.8 A
8
V_DS = 15 V
6
V_DS = 21 V
4
2
0
0
4
8
12
16
20
Q_g - Total Gate Charge (nC)
Gate Charge
Document Number: 73451
S-80440-Rev. C, 03-Mar-08
4
T_C = 125 °C
2
25 °C
- 55 °C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
1500
C_iss
1200
900
600
C_oss
300
C_rss
0
0
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.8
1.6 ^{ID = 13.8 A}
1.4
V_GS = 10 V
1.2
V_GS = 4.5 V
1.0
0.8
0.6
- 50 - 25 0 25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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