SI7686DP-T1-E3 Datasheet, PDF (4/9 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

Si7686DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50
0.030
T_J = 150 °C
10
0.025
0.020
I_D = 13.8 A
T_J = 25 °C
1
0.00
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.015
0.010
T_J = 25 °C
T_J = 125 °C
0.005
3
4
5
6
7
8
9
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
2.6
2.4
2.2
2.0
I_D = 250 µA
1.8
1.6
1.4
1.2
1.0
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by
R_DS(on)*
10
1
0.1
50
40
30
20
10
0
0.01
0.1
1
10
100 600
Time (s)
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
100 ms
1s
10 s
DC
0.01
T_A = 25 °C
Single Pulse
0.001
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
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4
Document Number: 73451
S-80440-Rev. C, 03-Mar-08