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SI7454DDP Datasheet, PDF (6/13 Pages) Vishay Telefunken – N-Channel 100 V (D-S) MOSFET
New Product
Si7454DDP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
0.1
0.01
0.0001
0.2
0.1
0.05
0.02
Single Pulse
NNootteess::
PPDDMM
tt11
tt22
11.. DDuuttyy CCyyccllee,, DD ==
tt11
tt22
22.. PPeerr UUnniitt BBaassee == RRtthhJJAA== 7700 °°CC//WW
33.. TTJJMM -- TTAA == PPDDMMZZtthhJJAA((tt))
44.. SSuurrffaaccee MMoouunntteedd
0.001
0.01
0.1
1
10
100
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1000
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
0.02
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67883.
www.vishay.com
For technical questions, contact: pmostechsupport@vishay.com
Document Number: 67883
6
S12-1358-Rev. A, 11-Jun-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000