SI7454DDP Datasheet, PDF (4/13 Pages) Vishay Telefunken – N-Channel 100 V (D-S) MOSFET

New Product
Si7454DDP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.20
10
0.16
T_J = 150 °C
1
T_J = 25 °C
0.12
I_D = 10 A
0.1
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.4
0.2
0
- 0.2
- 0.4
- 0.6
I_D = 5 mA
I_D = 250 μA
- 0.8
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
I_DM Limited
0.08
0.04
T_J = 25 °C
T_J = 125 °C
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
100
80
60
40
20
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
10 _{ID Limited}
100 μs
1
Limited by R_DS(on)*
1 ms
10 ms
100 ms
0.1
1s
T_A = 25 °C
Single Pulse
0.01
10 s
BVDSS Limited ^DC
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
For technical questions, contact: [e-mail]
Document Number: 67883
4
S12-1358-Rev. A, 11-Jun-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000