SI7454DDP Datasheet, PDF (3/13 Pages) Vishay Telefunken – N-Channel 100 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
50
50
V_GS = 10 V thru 5 V
40
40
Si7454DDP
Vishay Siliconix
30
V_GS = 4 V
20
10
0
0.0
0.0700
V_GS = 3 V
1.0
2.0
3.0
4.0
5.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
30
20
T_C = 25 °C
10
T_C = 125 °C
T_C = - 55 °C
0
0.0
1.6
3.2
4.8
6.4
8.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
850
0.0600
0.0500
0.0400
V_GS = 4.5 V
0.0300
V_GS = 7.5 V
V_GS = 10 V
0.0200
0
8
16
24
32
40
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 10 A
8
V_DS = 50 V
6
V_DS = 25 V
4
V_DS = 75 V
680
C_iss
510
C_oss
340
170
C_rss
0
0
16
32
48
64
80
V_DS - Drain-to-Source Voltage (V)
Capacitance
2.0
I_D = 10 A
1.7
V_GS = 10 V
1.4
V_GS = 4.5 V
1.1
2
0.8
0
0.0
2.8
5.6
8.4
11.2
14.0
Q_g - Total Gate Charge (nC)
Gate Charge
0.5
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 67883
For technical questions, contact: [e-mail]
www.vishay.com
S12-1358-Rev. A, 11-Jun-12
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000