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| SI5906DU Datasheet, PDF (6/10 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET | |||
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New Product
Si5906DU
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10-4
Single Pulse
10-3
1
Duty Cycle = 0.5
Notes:
PDM
t1
1.
2.
t2
Duty Cycle, D
Per Unit Base
=
=
t1
Rt2thJA
=
105
°C/W
3. TJM - TA = PDM Z thJA(t)
4. Surface Mounted
10-2
10-1
1
10
100
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1000
0.2
0.05
0.1
Single Pulse
0.02
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65168.
www.vishay.com
6
Document Number: 65168
S09-1394-Rev. A, 20-Jul-09
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