SI5906DU Datasheet, PDF (3/10 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
25
10
20
V_GS = 10 V thru 4 V
8
Si5906DU
Vishay Siliconix
15
10
V_GS = 3 V
5
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.06
0.05
0.04
0.03
0.02
V_GS = 4.5 V
V_GS = 10 V
0.01
0.00
0
5
10
15
20
25
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
400
350
300
250
200
150
100
50
0
0
C_iss
C_oss
C_rss
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
6
T_C = - 55 °C
4
T_C = 25 °C
2
T_C = 125 °C
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.12
0.10
0.08
0.06
0.04
0.02
V_GS = 4.5 V
V_GS = 10 V
0.00
0
5 10 15 20 25 30 35 40
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 6.6 A
8
V_DS = 7.5 V
6
V_DS = 24 V
4
V_DS = 15 V
2
0
0
1
2
3
4
5
6
Q_g - Total Gate Charge (nC)
Gate Charge
Document Number: 65168
S09-1394-Rev. A, 20-Jul-09
www.vishay.com
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