SI5906DU Datasheet, PDF (4/10 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET

New Product
Si5906DU
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1.8
100
I_D = 4.8 A
1.6
V_GS = 10 V
1.4
10
V_GS = 4.5 V
1.2
1.0
1
T_J = 150 °C
T_J = 25 °C
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.08
0.06
I_D = 4.8 A; T_J = 125 °C
0.04
0.02
I_D = 4.8 A; T_J = 25 °C
I_D = 1 A; T_J = 125 °C
I_D = 1 A; T_J = 25 °C
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
30
25
20
15
10
5
0
0.001 0.01
0.1
1
10
100 1000
Time (s)
Single Pulse Power (Junction-to-Ambient)
0.1
0.0
0.3
0.6
0.9
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
2.0
1.9
1.8
1.7
I_D = 250 µA
1.6
1.5
1.4
1.3
1.2
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by R_DS(on)*
10
100 µs
1
1 ms
10 ms
100 ms
0.1
1 s, 10 s
T_A = 25 °C
Single Pulse
DC
BVDSS Limited
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 65168
S09-1394-Rev. A, 20-Jul-09